12
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
TYPICAL CHARACTERISTICS ? 470--860 MHz BROADBAND REFERENCE CIRCUIT
26
10
70
f, FREQUENCY (MHz)
Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
450
9W
50
40
18 W
30
9W
20
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
60
Pout
=4.5W
VDD
=50Vdc,IDQ
= 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
24
22
20
18
16
14
500 550 600 650 700 750 800 850 900
18 W
4.5 W
12
-- 5 0
10
f, FREQUENCY (MHz)
Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
450
-- 1 0
18 W
-- 2 0
-- 3 0
9W
-- 4 0
OUTPUT PAR (dB)
=4.5W
0
Pout
9W
VDD
=50Vdc,IDQ
= 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
8
6
4
2
0
500 550 600 650 700 750 800 850 900
4.5 W
18 W
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
26
VDD
=50Vdc,IDQ
= 450 mA
Pulse Width = 100
μsec, 10% Duty Cycle
20
80
Pout, OUTPUT POWER (WATTS) PULSED
Figure 25. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
0
60
50
40
30
Gps
ηD
70
24
22
20
18
16
14
20 40 60 80 100 120 140 160
470 MHz
η
D
,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
600 MHz
750 MHz
750 MHz
600 MHz
470 MHz860 MHz
860 MHz
PAR
IMD(1)
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
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